Intrinsic and Extrinsic Semiconductors

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Intrinsic Semiconductor

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Extrinsic Semiconductor

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Electron Hole Concentration Calculation

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Important Questions

Write down 5 difference between N-type and P-type semiconductors.

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Suppose a pure Si crystal has  atoms . it is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and  holes. Given that .

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A silicon specimen is made into a p-type semiconductor by doping on the average one indium atom per silicon atoms. If the number density of atoms in the silicon specimen is atoms. Then the number of acceptor atoms in silicon will be.

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In an intrinsic semiconductor, the number of electrons in the conduction band is ________ the number of holes in the valence band.

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If the ratio of the concentration of electrons to that of holes in a semiconductors is and the ratio of currents is, then the ratio of drift velocities is

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Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are and . The electron and hole densities are each equal to . The electrical conductivity of germanium is

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Pure at has equal number of electron and hole concentration of . Doping by indium increases to . The doped semiconductor is of

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An n-type and p-type silicon can be obtained by doping pure silicon with :

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Electrical conduction in a semiconductor takes place due to

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The contribution in the total current flowing through a semiconductor due to electrons and holes are    and    If the drift velocity of the electron is    times that of holes at this temperature, then the ratio of concentration of electrons and holes is

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