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Semiconductor Electronics: Materials, Devices and Simple Circuits
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Intrinsic and Extrinsic Semiconductors
Intrinsic and Extrinsic Semiconductors
Revise with Concepts
Intrinsic Semiconductor
Example
Definitions
Formulaes
Extrinsic Semiconductor
Example
Definitions
Formulaes
Electron Hole Concentration Calculation
Example
Definitions
Formulaes
Learn with Videos
Intrinsic Semiconductor
8 mins
Effect of Temperature on Pure Semiconductor
7 mins
Intrinsic Semiconductor
8 mins
Extrinsic Semiconductor
6 mins
p-type and n-type semiconductor
17 mins
Semiconductor in thermal equilibrium
4 mins
Quick Summary With Stories
Introduction to Intrinsic Semiconductors
3 mins read
Intrinsic Semiconductor
3 mins read
Extrinsic Semiconductor
3 mins read
P-type and N-type Semiconductor
3 mins read
Conceptual Problems on Intrinsic/Extrinsic Semiconductor
2 mins read
Semiconductor in Thermal Equilibrium
2 mins read
Electron Hole Concentration Calculation
2 mins read
Important Questions
Write down 5 difference between N-type and P-type semiconductors.
Medium
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>
Suppose a pure Si crystal has
$5×10_{28}$
atoms
$m_{−3}$
. it is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that
$n_{1}=1.5×10_{16}m_{−3}$
.
Medium
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>
A silicon specimen is made into a p-type semiconductor by doping on the average one indium atom per
$5×10_{7}$
silicon atoms. If the number density of atoms in the silicon specimen is
$5×10_{28}$
atoms
$/m_{3}$
. Then the number of acceptor atoms in silicon will be.
Medium
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>
In an intrinsic semiconductor, the number of electrons in the conduction band is ________ the number of holes in the valence band.
Easy
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>
If the ratio of the concentration of electrons to that of holes in a semiconductors is
$57 $
and the ratio of currents is
$47 $
, then the ratio of drift velocities is
Medium
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>
Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are
$0.36m_{2}V_{−1}s_{−1}$
and
$0.17m_{2}V_{−1}s_{−1}$
. The electron and hole densities are each equal to
$2.5×10_{19}m_{3}$
. The electrical conductivity of germanium is
Hard
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>
Pure
$Si$
at
$500K$
has equal number of electron
$(n_{e})$
and hole
$(n_{h})$
concentration of
$1.5×10_{16}m_{−3}$
. Doping by indium increases
$n_{h}$
to
$4.5×10_{22}m_{−3}$
. The doped semiconductor is of
Hard
NEET
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>
An n-type and p-type silicon can be obtained by doping pure silicon with :
Medium
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>
Electrical conduction in a semiconductor takes place due to
Medium
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>
The contribution in the total current flowing through a semiconductor due to electrons and holes are
$43 $
and
$41 .$
If the drift velocity of the electron is
$25 $
times that of holes at this temperature, then the ratio of concentration of electrons and holes is
Medium
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>