A semiconductor has equal electron and hole concentration of $$ 6 \times 10^8 / m^3 $$. On doping with certain impurity , electron concentration increases to $$ 9 \times 10^{12} / m^3 $$. Calculate the new hole concentration.
A semiconductor has equal electron and hole concentration of $$ 6 \times 10^8 / m^3 $$. On doping with certain impurity , electron concentration increases to $$ 9 \times 10^{12} / m^3 $$. Calculate the new hole concentration.
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Q2
A semiconductor has equal electron and hole concentration of $$ 6 \times 10^8 / m^3 $$. On doping with certain impurity , electron concentration increases to $$ 9 \times 10^{12} / m^3 $$. Identify the new semiconductor obtained after doping.
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Q3
A semiconductor has equal electron and hole concentration of $$ 2 \times 10^8/m^3 $$. On doping with a certain impurity , the hole concentration increases to $$ 4 \times 10^{10} /m^3 $$ . Calculate the new electron and hole concentration of the semiconductor.
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Q4
A semiconductor has equal electron and hole concentration of $$ 2 \times 10^8/m^3 $$. On doping with a certain impurity , the hole concentration increases to $$ 4 \times 10^{10} /m^3 $$ . What type of semiconductor is obtained on doping ?
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Q5
A semiconductor has equal electron and hole concentration of $$ 2 \times 10^8/m^3 $$. On doping with a certain impurity , the hole concentration increases to $$ 4 \times 10^{10} /m^3 $$ . How does the energy gap vary with doping ?