A piece of copper and another of germanium are cooled from room temperature to 80 K. The resistance of:

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Answer 1

Copper is metallic conductor and germanium is semiconductor therefore as temperature decreases resistance of good conductor decreases while for semiconductor it increases.

Answer 2

Copper is metallic conductor and germanium is semiconductor therefore as temperature decreases resistance of good conductor decreases while for semiconductor it increases.

A piece of copper and another of germanium are cooled from room temperature to 80 K. The resistance of:

each of them increases

each of them decreases

copper increases and germanium decreases

copper decreases and germanium increases.

Copper is metallic conductor and germanium is semiconductor therefore as temperature decreases resistance of good conductor decreases while for semiconductor it increases.

Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are $0.36 m^{2} V^{- 1} s^{- 1}$ and $0.17 m^{2} V^{- 1} s^{- 1}$ . The electron and hole densities are each equal to $2.5 \times 1 0^{19} m^{3}$ . The electrical conductivity of germanium is

The Fermi level of an intrinsic semiconductor is pinned at the centre of the band gap. The probability of occupation of the highest electron state in valence band at room temperature, will be

the intrinsic semiconductor at room temperature is

What is the resistance of an intrinsic semiconductor at OK ?

Carbon, silicon and germanium have four valence electrons each. At room temperature which one ofthe following statements is most appropriate ?

Revise with Concepts

Intrinsic Semiconductor

Extrinsic Semiconductor

Electron Hole Concentration Calculation

A piece of copper and another of germanium are cooled from room temperature to 80 K. The resistance of:

each of them increases

each of them decreases

copper increases and germanium decreases

copper decreases and germanium increases.

Copper is metallic conductor and germanium is semiconductor therefore as temperature decreases resistance of good conductor decreases while for semiconductor it increases.

Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are 0.36m2V−1s−1 and 0.17m2V−1s−1. The electron and hole densities are each equal to 2.5×1019m3. The electrical conductivity of germanium is

The Fermi level of an intrinsic semiconductor is pinned at the centre of the band gap. The probability of occupation of the highest electron state in valence band at room temperature, will be

the intrinsic semiconductor at room temperature is

What is the resistance of an intrinsic semiconductor at OK ?

Carbon, silicon and germanium have four valence electrons each. At room temperature which one ofthe following statements is most appropriate ?

Revise with Concepts

Intrinsic Semiconductor

Extrinsic Semiconductor

Electron Hole Concentration Calculation

Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are $0.36 m^{2} V^{- 1} s^{- 1}$ and $0.17 m^{2} V^{- 1} s^{- 1}$ . The electron and hole densities are each equal to $2.5 \times 1 0^{19} m^{3}$ . The electrical conductivity of germanium is