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>>Semiconductor Electronics: Materials, Devices and Simple Circuits
>>Energy Bands
>> $A pn photo diode is fabricated from a se$

Question

A pn photo diode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :

A

$496 A^{o}$

B

$6000 A^{o}$

C

4000 nm

D

6000 nm

Medium

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Updated on : 2022-09-05

Solution

Verified by Toppr

Correct option is A)

$λ_{m a x} = \frac{h c}{e V}$

$= \frac{1 2 4 2 e V A ^{o}}{2 . 5 e V} = 4960 A^{o}$

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