0
You visited us 0 times! Enjoying our articles? Unlock Full Access!
Question

A pn photo diode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :
  1. 496Ao
  2. 6000Ao
  3. 4000 nm
  4. 6000 nm

A
4000 nm
B
6000 nm
C
6000Ao
D
496Ao
Solution
Verified by Toppr

λmax=hceV

Was this answer helpful?
21
Similar Questions
Q1
A pn photo diode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :
View Solution
Q2

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

View Solution
Q3
The maximum wavelength of photons that can be detected by a photo-diode, which is made of a semiconductor of band gap 2eV is about :
View Solution
Q4
A p-n photodiode is fabricated with a semiconductor having band gap of 3 ev, then
View Solution
Q5
A photo diode is made from a semiconductor In0.53. As, with Eg=0.73 eV. What is the maximum wavelength which it can detect? h=6.63×1034Js.
View Solution