A pn photo diode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :
$496 A^{o}$
$6000 A^{o}$
4000 nm
6000 nm

Question

A pn photo diode is fabricated from a semiconductor with a band gap of 2-5 eV- It can detect a signal of wavelength -496A-o6000A-o4000 nm6000 nm

Toppr Admin · Accepted Answer

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A pn photo diode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :496Ao6000Ao4000 nm6000 nm