Consider the following statements A and B and identify the correct answer.
Statement(A):A Zener diode is always connected in reverse bias to use it as voltage.
Statement(B):The potential barrier of a p-n junction lies between $0.1$ to $0.3 V$ , approximately.

Question

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Answer 1

When Zener diode is forward biased, it behaves like ordinary diode and when reverse biased, it will be a voltage stabilizer. Also, at room temperature, the voltage across the depletion layer for silicon is about $0.6 - 0.7 V$ and for germanium is about $0.3 - 0.35 V$
Hence, statement A is correct but statement B is wrong.

Answer 2

When Zener diode is forward biased, it behaves like ordinary diode and when reverse biased, it will be a voltage stabilizer. Also, at room temperature, the voltage across the depletion layer for silicon is about

0.6 - 0.7 V

and for germanium is about

0.3 - 0.35 V

Hence, statement A is correct but statement B is wrong.

Consider the following statements A and B and identify the correct answer.
Statement(A):A Zener diode is always connected in reverse bias to use it as voltage.
Statement(B):The potential barrier of a p-n junction lies between $0.1$ to $0.3 V$ , approximately.

A and B are correct.

A and B are wrong.

A is correct but B is wrong.

A is wrong but B is correct.

Consider the following statements A and B and identify the correct answer:
A) germanium is preferred over silicon in the construction of Zener diode.
B) germanium has high thermal stability than silicon in the construction of Zener diode.

Select the correct statement from the following:

A Zener diode when used as a voltage regulator, is connected
(a) in forward bias.
(b) in reverse bias.
(c) in parallel to the load.
(d) in series to the load.

A Zener diode

Consider the following statements A and B identify the correct statement from the following.
A) The width of the depletion layer in a p-n junction diode increases in forward bias.
B) In an intrinsic semiconductor, the Fermi energy level is exactly in the middle of the forbidden gap.

Revise with Concepts

Special Diodes: Zener Diode

Consider the following statements A and B and identify the correct answer. Statement(A):A Zener diode is always connected in reverse bias to use it as voltage. Statement(B):The potential barrier of a p-n junction lies between 0.1 to 0.3 V, approximately.

A and B are correct.

A and B are wrong.

A is correct but B is wrong.

A is wrong but B is correct.

Consider the following statements A and B and identify the correct answer:A) germanium is preferred over silicon in the construction of Zener diode.B) germanium has high thermal stability than silicon in the construction of Zener diode.

Select the correct statement from the following:

A Zener diode when used as a voltage regulator, is connected (a) in forward bias. (b) in reverse bias.(c) in parallel to the load.(d) in series to the load.

A Zener diode

Consider the following statements A and B identify the correct statement from the following.A) The width of the depletion layer in a p-n junction diode increases in forward bias.B) In an intrinsic semiconductor, the Fermi energy level is exactly in the middle of the forbidden gap.

Revise with Concepts

Special Diodes: Zener Diode

Consider the following statements A and B and identify the correct answer.
Statement(A):A Zener diode is always connected in reverse bias to use it as voltage.
Statement(B):The potential barrier of a p-n junction lies between $0.1$ to $0.3 V$ , approximately.

Consider the following statements A and B and identify the correct answer:
A) germanium is preferred over silicon in the construction of Zener diode.
B) germanium has high thermal stability than silicon in the construction of Zener diode.

A Zener diode when used as a voltage regulator, is connected
(a) in forward bias.
(b) in reverse bias.
(c) in parallel to the load.
(d) in series to the load.

Consider the following statements A and B identify the correct statement from the following.
A) The width of the depletion layer in a p-n junction diode increases in forward bias.
B) In an intrinsic semiconductor, the Fermi energy level is exactly in the middle of the forbidden gap.