Pure Si at 500K has equal number of electron (ne) and hole (nh) concentration of 1.5×1016m−3. Doping by indium increases nh to 4.5×1022m−3. The doped semiconductor is of
n-type with electron concentration ne=5×1022m−3
p-type with electron concentration ne=2.5×1010m−3
p-type having electron concentrations ne=5×109m−3
n-type with electron concentration ne=2.5×1023m−3
A
p-type with electron concentration ne=2.5×1010m−3
B
n-type with electron concentration ne=5×1022m−3
C
n-type with electron concentration ne=2.5×1023m−3
D
p-type having electron concentrations ne=5×109m−3
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Solution
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The correct option is Dp-type having electron concentrations ne=5×109m−3 n2i=nenh (1.5×1016)2=ne(4.5×1022) ne=0.5×1010 ne=5×109 nh=4.5×1022 nh≫ne Semiconductor is p-type and ne=5×109m−3.
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Q1
Pure Si at 500K has equal number of electrons(ne) and hole (nh) concentrations of 1.5×1016m−3. Doping by indium increases nhto4.5×1022m−3. The doped semiconductor is of :