Pure silicon crystal of length l(0.1m) and area A(10−4m2) has the mobility of electrons (μe) and holes (μh) as 0.135m2/Vs and 0.048m2/Vs , respectively. If the voltage applied across it is 2V and the intrinsic charge concentration is ni=1.5×106m−3, then the total current flowing through the crystal is
Pure silicon crystal of length l(0.1m) and area A(10−4m2) has the mobility of electrons (μe) and holes (μh) as 0.135m2/Vs and 0.048m2/Vs , respectively. If the voltage applied across it is 2V and the intrinsic charge concentration is ni=1.5×106m−3, then the total current flowing through the crystal is
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Q2
μe and μh are the electron and hole mobilities of a semiconducting crystal respectively. E is the applied electric field. Then the current density J for the intrinsic semiconductor is (Take ni the intrinsic concentration of the semiconductor)-
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Q3
μe and μh are the electron and hole mobilities of a semiconducting crystal respectively. E is the applied electric field. Then the current density J for the intrinsic semiconductor is (Take ni the intrinsic concentration of the semiconductor)-
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Q4
A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6×1016/m3. If the donor concentration level is 0.48×1020/m3, then the concentration of holes in the semiconductor is:
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Q5
Suppose a pure Sicrystal has 5×1028atomsm−3. It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni=1.5×1016m−3.