The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

crystal structure.

variation of the number of charge carriers with temperature.

type of bonding.

variation of scattering mechanism with temperature.

A

crystal structure.

B

variation of the number of charge carriers with temperature.

C

type of bonding.

D

variation of scattering mechanism with temperature.

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The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the variation of the number of charge carriers with temperature.

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