The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
crystal structure.
variation of the number of charge carriers with temperature.
type of bonding.
variation of scattering mechanism with temperature.
A
crystal structure.
B
variation of the number of charge carriers with temperature.
C
type of bonding.
D
variation of scattering mechanism with temperature.
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The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the variation of the number of charge carriers with temperature.
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