The increase in the width of the depletion region in a p-n junction diode is due to :

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Answer 1

The increase in the width of the depletion region is due to the absence of the electrons and holes in the region. This occurs only in the case of the reverse bias only in a diode.

Answer 2

The increase in the width of the depletion region is due to the absence of the electrons and holes in the region. This occurs only in the case of the reverse bias only in a diode.

The increase in the width of the depletion region in a p-n junction diode is due to :

reverse bias only

both forward bias and reverse bias

increase in forward current

forward bias only

The increase in the width of the depletion region is due to the absence of the electrons and holes in the region. This occurs only in the case of the reverse bias only in a diode.

In the depletion region of a pn junction, there is a shortage of

The thickness of the depletion region is of the order of ___________ of a micrometre.

In a semiconductor diode, the depletion region is removed when:

The width of the depleted region of a p-n junction is of the order of a few tenth of a ________.

The delpetion layer in a p-n junction diode is $1 0^{- 6} m$ wide and its knee potential is $0.5 V$ , then the inner electric field in the depletion region is:

Revise with Concepts

P - N Junction

Semiconductor Diode Under Biasing

The increase in the width of the depletion region in a p-n junction diode is due to :

reverse bias only

both forward bias and reverse bias

increase in forward current

forward bias only

The increase in the width of the depletion region is due to the absence of the electrons and holes in the region. This occurs only in the case of the reverse bias only in a diode.

In the depletion region of a pn junction, there is a shortage of

The thickness of the depletion region is of the order of ___________ of a micrometre.

In a semiconductor diode, the depletion region is removed when:

The width of the depleted region of a p-n junction is of the order of a few tenth of a ________.

The delpetion layer in a p-n junction diode is 10−6m wide and its knee potential is 0.5V, then the inner electric field in the depletion region is:

Revise with Concepts

P - N Junction

Semiconductor Diode Under Biasing

The delpetion layer in a p-n junction diode is $1 0^{- 6} m$ wide and its knee potential is $0.5 V$ , then the inner electric field in the depletion region is: