Solve

Guides

0

You visited us 0 times! Enjoying our articles? Unlock Full Access!

Question

When p-n junction diode is forward biased then
the depletion region is reduced and barrier height is increased.
the depletion region is widened and barrier height is reduced.
both the depletion region and barrier height are reduced.
both the depletion region and barrier height are increase.

A

the depletion region is reduced and barrier height is increased.

B

both the depletion region and barrier height are reduced.

C

the depletion region is widened and barrier height is reduced.

D

both the depletion region and barrier height are increase.

Open in App

Solution

Verified by Toppr

Was this answer helpful?

0

Similar Questions

Q1

In a forward biased p- n junction diode, the potential barrier in the depletion region is of the form:

View Solution

Q2

In a forward biased p – n junction diode, the potential barrier in the depletion region is of the form

View Solution

Q3

If a

p - n

junction diode of depletion layer width

W

and barrier height

V_{0}

is forward biased, then

View Solution

Q4

When forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{B}$ , and the width of charge depletion region?

View Solution

Q5

Consider following two statements

(A)

In forward biased condition, width of depletion region in p-n junction diode decreases.

(B)

Barrier potential of a p-n junction depends on amount of doping.

The correct statement(s) is/are

View Solution